Datasheet > CS140N08AR

CS140N08AR

更新时间： 2024-12-01 17:01:55

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华润微 - CRMICRO		/
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描述
TO-262

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CS140N08AR 数据手册

Silicon N-Channel Power MOSFET

CS140N08 AR

○

General Description：

V_DSS

I_D_（

CS140N08 AR, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

140

120

208

4.8

Silicon limited current^）

I_D_（

Package limited current^）

P_D(T_C=25℃)

mΩ

R_DS(ON)Typ

miniaturization and higher efficiency. The package form is TO-262,

which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤6mΩ)

l Low Gate Charge (Typical Data:87.5nC)

l Low Reverse transfer capacitances(Typical:291pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（T_J= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

140

Continuous Drain Current T_C= 25 °C

）

^（Silicon limited

I_D

120

Continuous Drain Current T_C= 25 °C_（

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

Package limited

480

I_DM

V_GS

±20

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

696

E_AS

208

1.66

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

300

T_L

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