Silicon N-Channel Power MOSFET
CS140N08 A8
R
○
General Description:
VDSS
85
V
A
CS140N08 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by advanced Trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
ID
140
208
4.8
(
)
Silicon limited current
PD(TC=25℃)
W
RDS(ON)Typ
mΩ
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
Fast Switching
Low ON Resistance(Rdson≤6mΩ)
Low Gate Charge (Typical Data:87.5nC)
Low Reverse transfer capacitances(Typical:291pF)
100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
85
140
88
V
A
Continuous Drain Current
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
A
a1
560
±20
696
208
1.66
A
IDM
Gate-to-Source Voltage
VGS
V
a2
Single Pulse Avalanche Energy
Power Dissipation
mJ
W
EAS
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W/℃
℃
℃
TJ,Tstg
150,–55 to 150
300
TL
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