Datasheet > CRS10I30E

CRS10I30E

更新时间： 2024-11-04 14:57:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	306K
描述
30 V/1 A Schottky Barrier Diode, S-FLAT

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CRS10I30E 数据手册

CRS10I30E

Schottky Barrier Diode

CRS10I30E

1. Applications

•

Secondary Rectification in Switching Regulators

•

Reverse-Current Protection in Mobile Devices

2. Features

(1) Repetitive peak reverse voltage: VRRM = 30 V

(2) Average forward current: IF(AV) = 1.0 A

(3) Peak forward voltage: VFM = 0.48 V (max) @IFM = 1.0 A (pulse measurement)

(4) The use of small, thin surface-mount package is optimum way for high-density mounting.

Nickname: S-FLATTM

3. Packaging and Internal Circuit

1: Anode

2: Cathode

S-FLAT

Start of commercial production

2022-03

Toshiba Electronic Devices & Storage Corporation

2022-03-22

Rev.2.0

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
CRS10I40A	TOSHIBA	获取价格	40 V/1 A Schottky Barrier Diode, S-FLAT
CRS10I40B	TOSHIBA	获取价格	40 V/1 A Schottky Barrier Diode, S-FLAT
CRS10I40E	TOSHIBA	获取价格	40 V/1 A Schottky Barrier Diode, S-FLAT
CRS10I60E	TOSHIBA	获取价格	60 V/1 A Schottky Barrier Diode, S-FLAT
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