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CRS10I40B PDF预览

CRS10I40B

更新时间: 2024-11-04 14:56:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 199K
描述
40 V/1 A Schottky Barrier Diode, S-FLAT

CRS10I40B 数据手册

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CRS10I40B  
Schottky Barrier Diode  
CRS10I40B  
1. Applications  
Secondary Rectification in Switching Regulators  
Reverse-Current Protection in Mobile Devices  
2. Features  
(1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 1 A  
(2) Average forward current: IF(AV) = 1 A  
(3) Repetitive peak reverse voltage: VRRM = 40 V  
(4) Small, thin package suitable for high-density board assembly  
Toshiba Nickname: S-FLATTM  
3. Packaging and Internal Circuit  
1: Anode  
2: Cathode  
3-2A1S  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Repetitive peak reverse voltage  
Symbol  
Note  
Rating  
Unit  
VRRM  
IF(AV)  
IFSM  
Tj  
40  
V
A
Average forward current  
(Note 1)  
(Note 2)  
1
25  
Non-repetitive peak forward surge current  
Junction temperature  
150  
Storage temperature  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: T= 126 , square wave (α = 180°), VR = 20 V  
Note 2: f = 50 Hz, half-sine wave, non-repetitive  
Start of commercial production  
2010-10  
©2020  
Toshiba Electronic Devices & Storage Corporation  
2020-10-14  
Rev.3.0  
1

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