Datasheet > CRS10I40B

CRS10I40B

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	199K
描述
40 V/1 A Schottky Barrier Diode, S-FLAT

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CRS10I40B 数据手册

CRS10I40B

Schottky Barrier Diode

CRS10I40B

1. Applications

•

Secondary Rectification in Switching Regulators

•

Reverse-Current Protection in Mobile Devices

2. Features

(1) Peak forward voltage: VFM = 0.45 V (max) @IFM = 1 A

(2) Average forward current: IF(AV) = 1 A

(3) Repetitive peak reverse voltage: VRRM = 40 V

(4) Small, thin package suitable for high-density board assembly

Toshiba Nickname: S-FLATTM

3. Packaging and Internal Circuit

1: Anode

2: Cathode

3-2A1S

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Repetitive peak reverse voltage

Symbol

Note

Rating

Unit

VRRM

IF(AV)

IFSM

Average forward current

(Note 1)

(Note 2)

Non-repetitive peak forward surge current

Junction temperature

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tℓ = 126 , square wave (α = 180°), VR = 20 V

Note 2: f = 50 Hz, half-sine wave, non-repetitive

Start of commercial production

2010-10

Toshiba Electronic Devices & Storage Corporation

2020-10-14

Rev.3.0

12 3 4 5 6 7

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