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CRS12(TE85L) PDF预览

CRS12(TE85L)

更新时间: 2024-11-03 21:17:15
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
5页 145K
描述
RECTIFIER DIODE,SCHOTTKY,60V V(RRM),UMD2VAR

CRS12(TE85L) 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.58 V最大非重复峰值正向电流:20 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

CRS12(TE85L) 数据手册

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CRS12  
TOSHIBA Schottky Barrier Diode  
CRS12  
Switching Mode Power Supply Applications  
(Output voltage: 12 V)  
Unit: mm  
DC/DC Converter Applications  
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
Suitable for compact assembly due to small surface-mount package  
“SFLATTM” (Toshiba package name)  
= 0.58 V (max)  
FM  
= 1.0 A  
F (AV)  
= 60 V  
RRM  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
60  
V
A
RRM  
I
1.0 (Note 1)  
20 (50 Hz)  
40~150  
40~150  
F (AV)  
Non-repetitive peak surge current  
Junction temperature  
I
A
FSM  
T
j
°C  
°C  
Storage temperature range  
T
stg  
Note 1: Ta = 73°C  
JEDEC  
JEITA  
Device mounted on a ceramic board  
Board size: 50 mm × 50 mm  
Soldering size: 2 mm × 2 mm  
Board thickness: 0.64 t  
TOSHIBA  
3-2A1A  
Rectangular waveform (α = 180°), V = 30 V  
R
Weight: 0.013 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.7 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
0.48  
0.52  
0.4  
0.58  
FM (1)  
FM (2)  
FM  
FM  
Peak forward voltage  
= 1.0 A (pulse test)  
I
V
V
V
= 5 V (pulse test)  
= 60 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
μA  
I
4.0  
100  
C
= 10 V, f = 1.0 MHz  
R
40  
pF  
j
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
70  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
140  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 1.2 mm × 1.2 mm)  
(board thickness: 1.6 t)  
240  
20  
Thermal resistance  
(junction to lead)  
R
th (j-)  
°C/W  
1
2006-11-13  

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