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CRS11 PDF预览

CRS11

更新时间: 2024-11-18 03:26:51
品牌 Logo 应用领域
东芝 - TOSHIBA 整流二极管开关光电二极管
页数 文件大小 规格书
5页 177K
描述
Switching Mode Power Supply Applications

CRS11 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:3-2A1A, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.52Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.36 V
JESD-30 代码:R-PDSO-F2最大非重复峰值正向电流:20 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CRS11 数据手册

 浏览型号CRS11的Datasheet PDF文件第2页浏览型号CRS11的Datasheet PDF文件第3页浏览型号CRS11的Datasheet PDF文件第4页浏览型号CRS11的Datasheet PDF文件第5页 
CRS11  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CRS11  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
Forward voltage: V  
= 0.36 V (max)  
FM  
Average forward current: I  
= 1.0 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 30 V  
RRM  
Suitable for compact assembly due to small surface-mount package  
“SFLATTM” (Toshiba package name)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
I
1.0 (Note 1)  
F(AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
20 (50 Hz)  
A
FSM  
JEDEC  
JEITA  
Junction temperature  
Storage temperature  
T
40~125  
40~150  
°C  
°C  
j
T
stg  
TOSHIBA  
3-2A1A  
Note 1: T= 98.7°C: Rectangular waveform (α = 180°), V = 15 V  
R
Weight: 0.013 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
= 0.1 A  
= 0.7 A  
= 1.0 A  
0.20  
0.30  
0.32  
0.06  
0.6  
FM (1)  
FM (2)  
FM (3)  
FM  
FM  
FM  
Peak forward voltage  
0.36  
I
V
V
V
= 5 V  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
mA  
pF  
I
= 30 V  
1.5  
C
= 10 V, f = 1.0 MHz  
R
60  
j
Device mounted on a ceramic board  
(soldering land: 2 mm × 2 mm)  
70  
Thermal resistance (junction to ambient)  
Thermal resistance (junction to lead)  
R
°C/W  
°C/W  
th (j-a)  
Device mounted on a glass-epoxy  
board  
(soldering land: 6 mm × 6 mm)  
140  
20  
R
th (j-)  
1
2006-11-13  

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