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CRS12

更新时间： 2024-09-15 03:26:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关电阻器
页数 文件大小 规格书
5页 148K
描述
Switching Mode Power Supply Applications

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中文翻译

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CRS12 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：3-2A1A, S-FLAT, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.73配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PDSO-F2最大非重复峰值正向电流：20 A
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-40 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：60 V子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

CRS12 数据手册

 浏览型号CRS12的Datasheet PDF文件第2页浏览型号CRS12的Datasheet PDF文件第3页浏览型号CRS12的Datasheet PDF文件第4页浏览型号CRS12的Datasheet PDF文件第5页 
CRS12  
TOSHIBA Schottky Barrier Diode  
CRS12  
Switching Mode Power Supply Applications  
(Output voltage: ≤12 V)  
Unit: mm  
DC/DC Converter Applications  
•
•
•
•
Forward voltage: V  
Average forward current: I  
Repetitive peak reverse voltage: V  
Suitable for compact assembly due to small surface-mount package  
“S−FLATTM” (Toshiba package name)  
= 0.58 V (max)  
FM  
= 1.0 A  
F (AV)  
= 60 V  
RRM  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
60  
V
A
RRM  
I
1.0 (Note 1)  
20 (50 Hz)  
−40~150  
−40~150  
F (AV)  
Non-repetitive peak surge current  
Junction temperature  
I
A
FSM  
T
j
°C  
°C  
Storage temperature range  
T
stg  
Note 1: Ta = 73°C  
JEDEC  
JEITA  
―
―
Device mounted on a ceramic board  
Board size: 50 mm × 50 mm  
Soldering size: 2 mm × 2 mm  
Board thickness: 0.64 t  
TOSHIBA  
3-2A1A  
Rectangular waveform (α = 180°), V = 30 V  
R
Weight: 0.013 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.7 A (pulse test)  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
⎯
⎯
⎯
⎯
⎯
0.48  
0.52  
0.4  
⎯
0.58  
⎯
FM (1)  
FM (2)  
FM  
FM  
Peak forward voltage  
= 1.0 A (pulse test)  
I
V
V
V
= 5 V (pulse test)  
= 60 V (pulse test)  
RRM (1)  
RRM (2)  
RRM  
RRM  
Peak repetitive reverse current  
Junction capacitance  
μA  
I
4.0  
100  
⎯
C
= 10 V, f = 1.0 MHz  
R
40  
pF  
j
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 t)  
⎯
⎯
⎯
⎯
70  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 t)  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
°C/W  
140  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 1.2 mm × 1.2 mm)  
(board thickness: 1.6 t)  
⎯
⎯
⎯
⎯
240  
20  
Thermal resistance  
(junction to lead)  
R
th (j-ℓ)  
⎯
°C/W  
1
2006-11-13  
12345

中文翻译

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