CRJS380N65G2
华润微电子(重庆)有限公司
SJMOS N-MOSFET 650V, 330mΩ, 11A
Features
Product Summary
VDS,min
RDS(on),typ
ID
650V
330mΩ
11A
• CRM(CQ) Super_Junction technology
• Much lower Ron*A performance for On-state efficiency
• Better efficiency due to very low FOM
Applications
100% DVDS Tested
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System
• Charger
100% Avalanche Tested
• Power Supply
Package Marking and Ordering Information
Part #
Marking
Package
TO-263
Packing
Reel Size
Tape Width
N/A
Qty
CRJS380N65G2
CRJS380N65G2
Tape&Reel
N/A
1000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
650
V
1)
Continuous drain current
ID
A
TC = 25°C
11
7
TC = 100°C
Pulsed drain current 2)(TC = 25°C, tp limited by Tj,max
Avalanche energy, single pulse (L=30mH)
MOSFET dv/dt ruggedness
)
42
75
A
mJ
V/ns
V
ID,pulse
EAS
dv/dt
VGS
50
Gate-Source voltage
±30
102
Power dissipation (TC = 25°C)
Ptot
W
Continuous diode forward current(TC = 25°C)
Diode pulse current 2) (TC = 25°C)
IS
11
A
IS,pulse
dv/dt
Tj , Tstg
42
A
3)
50
V/ns
°C
Recovery diode dv/dt
Operating junction and storage temperature
-55...+150
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical Rg
Rev1.1
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