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CRJT99N65G2 PDF预览

CRJT99N65G2

更新时间: 2024-11-19 17:01:35
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 1446K
描述
TO-220

CRJT99N65G2 数据手册

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CRJT99N65G2  
华润微电子(重庆)有限公司  
SJMOS N-MOSFET 650V, 81mΩ, 32A  
Features  
Product Summary  
VDS,min  
RDS(on),typ  
ID  
650V  
81mΩ  
32A  
• CRM(CQ) Super_Junction technology  
• Much lower Ron*A performance for On-state efficiency  
• Better efficiency due to very low FOM  
• Qualified for industrial grade applications according to JEDEC  
Applications  
100% DVDS Tested  
• LED/LCD/PDP TV and monitor Lighting  
• Solar/Renewable/UPS-Micro Inverter System  
• Charger  
100% Avalanche Tested  
• Power Supply  
Top view  
Bottom view  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
TO-220  
Packing  
Tube  
Reel Size  
Tape Width  
N/A  
Qty  
CRJT99N65G2  
CRJT99N65G2  
N/A  
50pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drain-source voltage  
650  
V
1)  
Continuous drain current  
ID  
A
TC = 25°C  
32  
20  
TC = 100°C  
Pulsed drain current 2)(TC = 25°C, tp limited by Tj,max  
Avalanche energy, single pulse (L=30mH)  
MOSFET dv/dt ruggedness  
)
128  
480  
A
mJ  
V/ns  
V
ID,pulse  
EAS  
dv/dt  
VGS  
50  
Gate-Source voltage  
±30  
Power dissipation (TC = 25°C)  
Ptot  
252  
W
Continuous diode forward current(TC = 25°C)  
Diode pulse current 2) (TC = 25°C)  
IS  
32  
A
IS,pulse  
dv/dt  
Tj , Tstg  
128  
A
3)  
50  
V/ns  
°C  
Recovery diode dv/dt  
Operating junction and storage temperature  
-55...+150  
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50  
2) Pulse width tp limited by Tj,max  
3) Identical low side and high side switch with identical Rg  
Rev2.1  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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