Datasheet > CRJT99N65G2B

CRJT99N65G2B

更新时间： 2024-10-29 17:02:07

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1383K
描述
TO-220AB

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中文翻译

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数据手册

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CRJT99N65G2B 数据手册

CRJT99N65G2B

华润微电子(重庆)有限公司

SJMOS N-MOSFET 650V, 81mΩ, 31A

Features

Product Summary

V_DS,min

R_DS(on),typ

I_D

650V

81mΩ

31A

• CRM(CQ) Super_Junction technology

• Much lower Ron*A performance for On-state efficiency

• Better efficiency due to very low FOM

• Qualified for industrial grade applications according to JEDEC

Applications

100% DVDS Tested

• LED/LCD/PDP TV and monitor Lighting

• Solar/Renewable/UPS-Micro Inverter System

• Charger

100% Avalanche Tested

• Power Supply

Top view

Bottom view

Package Marking and Ordering Information

Part #

Marking

Package

TO-220

Packing

Tube

Reel Size

Tape Width

N/A

Qty

CRJT99N65G2B

N/A

50pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

650

Continuous drain current

I_D

T_C= 25°C

T_C= 100°C

Pulsed drain current ²⁾(T_C= 25°C, t_plimited by T_j,max

Avalanche energy, single pulse (L=30mH)

MOSFET dv/dt ruggedness

)

123

480

V/ns

I_D,pulse

E_AS

dv/dt

V_GS

Gate-Source voltage

±30

Power dissipation (T_C= 25°C)

P_tot

252

Continuous diode forward current(T_C= 25°C)

Diode pulse current ²⁾(T_C= 25°C)

I_S

I_S,pulse

dv/dt

T_j, T_stg

123

V/ns

°C

Recovery diode dv/dt

Operating junction and storage temperature

-55...+150

1) Limited by T_j,max. Maximum Duty Cycle D = 0.50

2) Pulse width t_plimited by T_j,max

3) Identical low side and high side switch with identical R_g

Rev2.0

©China Resources Microelectronics (Chongqing) Limited

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