Datasheet > CRJT190N65GCF

CRJT190N65GCF

更新时间： 2024-04-09 18:59:15

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	1285K
描述
TO-220AB

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CRJT190N65GCF 数据手册

CRJT190N65GCF

华润微电子(重庆)有限公司

SJMOS N-MOSFET 650V, 183mΩ, 21A

Features

Product Summary

• CRM(CQ) Super_Junction technology

• Much lower Ron*A performance for On-state efficiency

• Better efficiency due to very low FOM

• Ultra-fast body diode

V_DS

650V

183mΩ

21A

R_DS(on),typ

I_D

• Qualified for industrial grade applications according to JEDEC

Applications

100% DVDS Tested

• LED/LCD/PDP TV and monitor Lighting

• Solar/Renewable/UPS-Micro Inverter System

• Charger

100% Avalanche Tested

• Power Supply

Top view

Bottom view

Package Marking and Ordering Information

Part #

Marking

Package

TO-220

Packing

Tube

Reel Size

N/A

Tape Width

N/A

Qty

CRJT190N65GCF

50pcs

Absolute Maximum Ratings(at Tj = 25 °C, unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-source voltage

650

Continuous drain current

T_C= 25℃

I_D

T_C= 100℃

I_D,pulse

E_AS

Pulsed drain current

(T_C=25℃, t_plimited by T_j,max

)

Avalanche energy, single pulse (L=30mH)

MOSFET dv/dt ruggedness

220

dv/dt

V/ns

V_GS

P_tot

Gate-Source voltage

±30

245

Power dissipation(T_C=25℃)

Continuous diode forward current(T_C=25℃)

Diode pulse current(T_C=25℃)

I_S

I_S,pulse

dv/dt

di_F/dt

T_j, T _stg

V/ns

A/μs

℃

Recovery diode dv/dt

Maximum diode commutation speed

900

Operating junction and storage temperature

-55...+150

1) Limited by T_j,max. Maximum Duty Cycle D=0.50

2) Pulse width tp limited by T_j,max

3) Identical low side and high side switch with identical R_g

Rev2.1

©China Resources Microelectronics (Chongqing) Limited

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