Datasheet > CRJT065N60G3F-G

CRJT065N60G3F-G

更新时间： 2024-11-19 15:19:11

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1192K
描述
TO-220

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数据手册

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CRJT065N60G3F-G 数据手册

Silicon N-Channel Power MOSFET

CRJT065N60G3F-G

General Description：

V_DSS(Tjmax)

I_D

600

CRJT065N60G3F-G, the silicon N-channel Enhanced

MOSFETs, is obtained by the super junction technology which

reduces the conduction loss, improve switching performance and

enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and

higher efficiency. The package type is TO-220, which accords

with the RoHS standard.

P_D(T_C=25℃)

187

R_DS(ON)Typ

mΩ

Eoss@400V

8.5

Features：

 Fast Switching

 LowGateCharge

 LowReversetransfercapacitances

 100%SinglePulseavalancheenergyTest

 HalogenFree

 Zener-Protected

Applications：

Power switch circuit of adaptor, charger and LED.

Absolute（Tj= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage(V_GS=0V)

Continuous Drain Current T_C= 25 °C

600

I_D

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

120

I_DM

V_GSS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

E_AS

675

V/ns

A/us

dv/dt

MOSFET dv/dt ruggedness

dv/dt

di_f/dt

P_D

Maximum diode communication speed

Power Dissipation(T_C=25°C )

Gate source ESD(HBM-C= 100pF, R=1.5kΩ)

500

187

V_ESD(G-S)

2000

–55…+150

T_J，T_stgOperating and Storage Temperature Range

℃

W UXI C HIN A R ES O UR C ES HUAJ ING MICRO EL EC TRON ICS CO., LT D.

P age 1 of 10 2 023 V02

12 3 4 5 6 7...10

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