Datasheet > CRJS360N70G2

CRJS360N70G2

更新时间： 2024-04-09 18:59:12

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	987K
描述
TO-263

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CRJS360N70G2 数据手册

CRJS360N70G2

华润微电子(重庆)有限公司

SJMOS N-MOSFET 700V, 330mΩ, 12A

Thermal Resistance

Parameter

Value

typ.

Symbol

Unit

Test Condition

min.

max.

Thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_thJC

R_thJA

0.70

0.98

°C/W

Electrical Characteristic (at T_j= 25 °C, unless otherwise specified)

Value

Symbol

Parameter

Unit

Test Condition

min.

typ.

max.

Static Characteristic

Drain-source breakdown

voltage

BV_DSS

V_GS(th)

V_GS=0V,I_D=250μA

700

V_DS=V_GS,I_D=250μA

V_DS=700V,V_GS=0V

T_j=25°C

Gate threshold voltage

Zero gate voltage drain

current

I_DSS

μA

T_j=150°C

I_GSS

V_GS=±30V,V_DS=0V

Gate-source leakage current

±100

V_GS=10V,I_D=3A,

T_j=25°C

Drain-source on-state

resistance

R_DS(on)

330

830

380

mΩ

T_j=150°C

g_fs

V_DS=20V,I_D=6A

Transconductance

Dynamic Characteristic

Input Capacitance

C_iss

753.4

40.6

V_GS=0V, V_DS=100V,

f=1MHz

C_oss

Output Capacitance

C_rss

Reverse Transfer Capacitance

1.4

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Gate Total Charge

Gate-Source charge

Gate-Drain charge

Turn-on delay time

Rise time

V_GS=10V, V_DS=480V,

I_D=6A

13.8

V_GS=10V, I_D=6A,

V_DS=400V, R_g=27Ω

t_d(off)

t_f

Turn-off delay time

Fall time

105

R_g,int

Gate resistance

9.3

f=1MHz

Rev2.1

©China Resources Microelectronics (Chongqing) Limited

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