5秒后页面跳转
CR05AS-8_10 PDF预览

CR05AS-8_10

更新时间: 2024-11-30 12:50:19
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
9页 134K
描述
Thyristor Low Power Use

CR05AS-8_10 数据手册

 浏览型号CR05AS-8_10的Datasheet PDF文件第2页浏览型号CR05AS-8_10的Datasheet PDF文件第3页浏览型号CR05AS-8_10的Datasheet PDF文件第4页浏览型号CR05AS-8_10的Datasheet PDF文件第5页浏览型号CR05AS-8_10的Datasheet PDF文件第6页浏览型号CR05AS-8_10的Datasheet PDF文件第7页 
Preliminary Datasheet  
CR05AS-8  
Thyristor  
R07DS0135EJ0500  
(Previous: REJ03G0348-0400)  
Rev.5.00  
Low Power Use  
Sep 15, 2010  
Features  
IT (AV) : 0.5 A  
DRM : 400 V  
GT : 100 A  
Non-Insulated Type  
Planar Passivation Type  
Surface Mounted type  
V
I
Outline  
RENESAS Package code: PLZZ0004CA-A  
RENESAS Package code: PLZZ0004CB-A  
(
Package name: UPAK)  
(
Package name: SOT-89)  
2, 4  
1. Cathode  
2. Anode  
3. Gate  
3
4
2
1
1
4. Anode  
2
3
3
4
1
Applications  
Solid state relay, strobe flasher, igniter, and hybrid IC  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
8 (Mark CD)  
400  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
Repetitive peak off-state voltageNote1  
DC off-state voltageNote1  
VRRM  
VRSM  
V
V
V
V
V
500  
VR (DC)  
VDRM  
320  
400  
VD (DC)  
320  
Parameter  
RMS on-state current  
Average on-state current  
Symbol  
IT (RMS)  
IT (AV)  
Ratings  
Unit  
A
Conditions  
0.79  
0.5  
A
Commercial frequency, sine half wave  
180° conduction, Ta = 57°CNote2  
60Hz sine half wave 1 full cycle,  
peak value, non-repetitive  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
10  
A
0.4  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
Storage temperature  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
0.1  
W
W
V
0.01  
6
6
0.1  
V
A
– 40 to +125  
– 40 to +125  
50  
°C  
°C  
mg  
Tstg  
Mass  
Typical value  
Notes: 1. With gate to cathode resistance RGK = 1 k.  
R07DS0135EJ0500 Rev.5.00  
Sep 15, 2010  
Page 1 of 8  

与CR05AS-8_10相关器件

型号 品牌 获取价格 描述 数据表
CR05AS-8A RENESAS

获取价格

SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89
CR05AS-8AB MITSUBISHI

获取价格

Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN
CR05AS-8-AB RENESAS

获取价格

0.79A, 400V, SCR, SC-62, 3 PIN
CR05AS-8-AB-T13 RENESAS

获取价格

0.79A, 400V, SCR, SC-62, 3 PIN
CR05AS8B MITSUBISHI

获取价格

Silicon Controlled Rectifier, 500mA I(T), 400V V(DRM)
CR05AS-8B RENESAS

获取价格

SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89
CR05AS-8-BC RENESAS

获取价格

0.79 A, 400 V, SCR, SC-62, 3 PIN
CR05AS-8-BC-T13 RENESAS

获取价格

0.79A, 400V, SCR, SC-62, 3 PIN
CR05AS-8C RENESAS

获取价格

SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-89
CR05AS-8-ET14 RENESAS

获取价格

Thyristor Low Power Use