Datasheet > CR05BM-12A-TBB00

CR05BM-12A-TBB00

更新时间： 2024-11-30 12:53:35

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	103K
描述
600V - 0.5A - Thyristor Low Power Use

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CR05BM-12A-TBB00 数据手册

Preliminary Datasheet

CR05BM-12A

600V - 0.5A - Thyristor

R07DS0992EJ0100

Rev.1.00

Dec 20, 2012

Low Power Use

Features



I_{T (AV)}: 0.5 A

_DRM: 600 V



I_GT: 100 A

Planar Type

Outline

RENESAS Package code: PRSS0003EA-A

(Package name: TO-92*)

1. Anode

2. Gate

3. Cathode

Applications

Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Repetitive peak off-state voltage ^Note1

DC off-state voltage ^Note1

V_RRM

V_RSM

V_R(DC)

V_DRM

V_D(DC)

600

720

480

600

480

Notes: 1. With gate to cathode resistance R_GK= 1 k.

Parameter

RMS on-state current

Average on-state current

Symbol

I_{T (RMS)}

I_{T (AV)}

Ratings

0.63

Unit

Conditions

Commercial frequency, sine half

0.4

wave 180 conduction, Ta = 54C

Commercial frequency, sine half

wave 180 conduction, Ta = 30C

50 Hz sine half wave 1 full cycle,

peak value, non-repetitive

0.5

Surge on-state current

I²t for fusion

I_TSM

I²t

0.32

A²s

Value corresponding to 1 cycle of half

wave 50 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate current

P_GM

P_{G (AV)}

V_FGM

V_RGM

I_FGM

0.5

0.1

0.3

Junction Temperature

Storage temperature

Mass

–40 to +125

0.23

C

Tstg

—

Typical value

R07DS0992EJ0100 Rev.1.00

Dec 20, 2012

Page 1 of 7

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