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CR05BS-8-ET13 PDF预览

CR05BS-8-ET13

更新时间: 2024-11-30 06:48:35
品牌 Logo 应用领域
瑞萨 - RENESAS 栅极触发装置可控硅整流器光电二极管
页数 文件大小 规格书
5页 117K
描述
Thyristor Low Power Use

CR05BS-8-ET13 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SC-59A
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.76Is Samacsys:N
配置:SINGLE最大直流栅极触发电流:0.1 mA
最大直流栅极触发电压:0.8 V最大维持电流:3 mA
JESD-30 代码:R-PDSO-G3最大漏电流:0.1 mA
通态非重复峰值电流:10 A元件数量:1
端子数量:3最大通态电流:100 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:0.15 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

CR05BS-8-ET13 数据手册

 浏览型号CR05BS-8-ET13的Datasheet PDF文件第2页浏览型号CR05BS-8-ET13的Datasheet PDF文件第3页浏览型号CR05BS-8-ET13的Datasheet PDF文件第4页浏览型号CR05BS-8-ET13的Datasheet PDF文件第5页 
CR05BS-8  
Thyristor  
Low Power Use  
REJ03G0347-0200  
Rev.2.00  
Mar 22, 2007  
Features  
IT (AV) : 0.1 A  
DRM : 400 V  
GT : 100 µA  
Non-Insulated Type  
Planar Passivation Type  
Completed Pb free product  
V
I
Outline  
RENESAS Package code: PRSS0004ZA-A  
RENESAS Package code: PLS
(
Package name:MPAK)  
(
Package name:SC-59)  
2
2
2
1. Cathode  
2. Anode  
3. Gate  
1
3
3
3
1
Applications  
Strobe flasher  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
8
Repetitive peak reverse voltage  
Non-repetitive peak reverse vo
DC reverse voltage  
Repetitive peak off-state
DC off-state voltageNote1  
VRRM  
VRSM  
VR(DC)  
VDRM  
VD(DC)  
400  
500  
320  
400  
320  
V
V
V
V
V
REJ03G0347-0200 Rev.2.00 Mar 22, 2007  
Page 1 of 4  

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