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CPDH6-5V0U_12 PDF预览

CPDH6-5V0U_12

更新时间: 2024-11-05 07:19:15
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
4页 93K
描述
SMD ESD Protection Diode

CPDH6-5V0U_12 数据手册

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SMD ESD Protection Diode  
CPDH6-5V0U  
RoHS Device  
Features  
SOT-563  
-IEC61000-4-2 8kV(Contact), 15kV(air).  
-Surface mount package.  
-High component density.  
0.067(1.70)  
0.059(1.50)  
0.051(1.30)  
0.043(1.10)  
Mechanical data  
-Case: SOT-563 Standard package, molded  
0.043(1.10)  
0.035(0.90)  
plastic.  
-Terminals: Gold plated, solderable per MIL-  
STD-750D, method 2026.  
0.006(0.16)  
0.004(0.09)  
0.024(0.600)  
0.021(0.525)  
0.067(1.70)  
0.059(1.50)  
-Mounting position: Any.  
-Weight: 0.0034 gram (approx.).  
0.002(0.05)max  
0.011(0.27)  
0.007(0.17)  
0.010(0.25)min  
Marking: E5U  
Dimensions in inches and (millimeter)  
6
1
5
4
3
6
5
4
E5U  
2
.
1
2
3
Maximum Rating and Electrical Characteristics  
(at TA=25°C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Conditions  
Min  
Diode breakdown voltage  
VBD  
IR = 1mA  
6.1  
7.1  
V
Leakage current  
IL  
VR = 3V  
IF = 5uA  
0.1  
60  
1.0  
1.2  
80  
uA  
V
Forward voltage  
VF  
CT  
Junction capacitance  
pF  
VR = 0V,f = 1MHz  
IPP = 1A,TP=8/20us  
IPP = 8A,TP=8/20us  
8
Clamping voltage  
VC  
V
10  
C = 150PF, R = 300ohm,  
forward and reverse 10 pulses  
ESD capability  
ESD  
PPP  
TJ  
8
kV  
W
Peak pulse power  
Operation temperature  
Storage temperature  
80  
125  
150  
°C  
°C  
TSTG  
-55  
REV:D  
Page 1  
QW-BP002  
Comchip Technology CO., LTD.  

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