Datasheet > CPDH6-5V0U_12

CPDH6-5V0U_12

更新时间： 2024-11-29 07:19:15

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	93K
描述
SMD ESD Protection Diode

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中文翻译

获取价格

数据手册

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CPDH6-5V0U_12 数据手册

SMD ESD Protection Diode

CPDH6-5V0U

RoHS Device

Features

SOT-563

-IEC61000-4-2 8kV(Contact), 15kV(air).

-Surface mount package.

-High component density.

0.067(1.70)

0.059(1.50)

0.051(1.30)

0.043(1.10)

Mechanical data

-Case: SOT-563 Standard package, molded

0.043(1.10)

0.035(0.90)

plastic.

-Terminals: Gold plated, solderable per MIL-

STD-750D, method 2026.

0.006(0.16)

0.004(0.09)

0.024(0.600)

0.021(0.525)

0.067(1.70)

0.059(1.50)

-Mounting position: Any.

-Weight: 0.0034 gram (approx.).

0.002(0.05)max

0.011(0.27)

0.007(0.17)

0.010(0.25)min

Marking: E5U

Dimensions in inches and (millimeter)

E5U

Maximum Rating and Electrical Characteristics

(at TA=25°C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Diode breakdown voltage

VBD

IR = 1mA

6.1

7.1

Leakage current

VR = 3V

IF = 5uA

0.1

1.0

1.2

Forward voltage

Junction capacitance

VR = 0V,f = 1MHz

IPP = 1A,TP=8/20us

IPP = 8A,TP=8/20us

Clamping voltage

C = 150PF, R = 300ohm,

forward and reverse 10 pulses

ESD capability

ESD

PPP

Peak pulse power

Operation temperature

Storage temperature

125

150

°C

TSTG

-55

REV:D

Page 1

QW-BP002

Comchip Technology CO., LTD.

12 3 4

中文翻译

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