Datasheet > CPD83V-CMPD7000

CPD83V-CMPD7000

更新时间： 2024-01-16 20:06:16

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
4页	543K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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CPD83V-CMPD7000 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

CPD83V-CMPD7000 数据手册

CPD83V-CMPD7000

High Speed Switching Diode Die

0.2 Amp, 100 Volt

www.centralsemi.com

The CPD83V-CMPD7000 is a silicon high speed switching diode ideal for all types of commercial,

industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

11 x 11 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.35 x 3.35 MILS

Al – 30,000Å

Au-As – 9,000Å

2.3 MILS

ANODE

5 INCHES

Gross Die Per Wafer

137,880

BACKSIDE CATHODE

MAXIMUM RATINGS: (T =25°C)

Peak Repetitive Reverse Voltage

SYMBOL

UNITS

100

200

RRM

Average Forward Current

°C

Peak Forward Surge Current, tp=1.0μs

Operating and Storage Junction Temperature

500

FSM

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

V =50V

MIN

MAX

300

UNITS

V =100V

500

I =100μA

100

0.55

0.67

0.75

I =1.0mA

0.70

0.82

1.10

2.6

I =10mA

I =100mA

V =0, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

4.0

R0 (16-September 2016)

12 3 4

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