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CPD83V-CMPD7000 PDF预览

CPD83V-CMPD7000

更新时间: 2024-11-23 21:12:07
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
4页 543K
描述
Rectifier Diode,

CPD83V-CMPD7000 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
二极管类型:RECTIFIER DIODEBase Number Matches:1

CPD83V-CMPD7000 数据手册

 浏览型号CPD83V-CMPD7000的Datasheet PDF文件第2页浏览型号CPD83V-CMPD7000的Datasheet PDF文件第3页浏览型号CPD83V-CMPD7000的Datasheet PDF文件第4页 
CPD83V-CMPD7000  
High Speed Switching Diode Die  
0.2 Amp, 100 Volt  
www.centralsemi.com  
The CPD83V-CMPD7000 is a silicon high speed switching diode ideal for all types of commercial,  
industrial, entertainment, and computer applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
11 x 11 MILS  
7.1 MILS  
Die Thickness  
Anode Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
3.35 x 3.35 MILS  
Al – 30,000Å  
Au-As – 9,000Å  
2.3 MILS  
ANODE  
5 INCHES  
Gross Die Per Wafer  
137,880  
BACKSIDE CATHODE  
R0  
MAXIMUM RATINGS: (T =25°C)  
Peak Repetitive Reverse Voltage  
SYMBOL  
UNITS  
V
A
V
100  
200  
RRM  
Average Forward Current  
I
mA  
mA  
°C  
O
Peak Forward Surge Current, tp=1.0μs  
Operating and Storage Junction Temperature  
I
500  
FSM  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
V =50V  
MIN  
MAX  
300  
UNITS  
nA  
I
R
R
I
V =100V  
500  
nA  
V
R
R
BV  
I =100μA  
100  
0.55  
0.67  
0.75  
R
R
V
V
V
I =1.0mA  
0.70  
0.82  
1.10  
2.6  
V
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
pF  
ns  
J
R
t
I =I =10mA, I =1.0mA, R =100Ω  
4.0  
rr  
F
R
rr  
L
R0 (16-September 2016)  

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