CPC3703
250V N-Channel
Depletion-Mode FET
INTEGRATED
CIRCUITS
DIVISION
Description
V(BR)DSX
V(BR)DGX
/
RDS(on)
(max)
IDSS (min)
Package
The CPC3703 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high
input impedance, for use in high-power applications.
The CPC3703 is a highly reliable device that has
been used extensively in our Solid State Relays for
industrial and telecommunications applications.
250V
4
360mA
SOT-89
Features
• High Breakdown Voltage: 250V
• Low On-Resistance: 4 max. at 25ºC
• Low VGS(off) Voltage: -1.6 to -3.9V
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• High Input Impedance
• Small Package Size: SOT-89
This device excels in power applications that require
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703 offers a low, 4 maximum, on-state
resistance at 25ºC.
Applications
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
The CPC3703 has a minimum breakdown voltage of
250V, and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3703CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Package Pinout
Circuit Symbol
D
S
D
G
D
S
G
(SOT-89)
DS-CPC3703-R07
1
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