Datasheet > CPC3703C

CPC3703C

更新时间： 2024-11-21 06:48:27

品牌	Logo	应用领域
CLARE		/
页数	文件大小	规格书
4页	98K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CPC3703C 数据手册

CPC3703

N-Channel Depletion-Mode

Vertical DMOS FETs

Description

BV_DSX

BV_DGX

250V

R_DS(ON)

(max)

4Ω

I_DSS(min)

Package

The CPC3703 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes Clare’s proprietary

third-generation vertical DMOS process. The

third-generation process realizes world class, high

voltage MOSFET performance in an economical

silicon gate process. Our vertical DMOS process

yields a robust device, with high input impedance,

for use in high-power applications. The CPC3703

is a highly reliable FET device that has been used

extensively in Clare’s Solid State Relays for industrial

and telecommunications applications.

360mA

SOT-89

Features

• Depletion mode device offers low R_DS(ON)at cold

temperatures

• Low on resistance 4 ohms max. at 25ºC

• High input impedance

• High breakdown voltage 250V

• Low V_GS(off)voltage -1.6 to -3.9V

• Small package size SOT89

This device excels in power applications that require

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3703 offers a low, 4Ω maximum, on-state

resistance at 25ºC.

Applications

• Ignition Modules

• Normally-on Switches

• Solid State Relays

• Converters

• Telecommunications

• Power Supply

The CPC3703 has a minimum breakdown voltage of

250V, and is available in an SOT89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

Ordering Information

Part #

CPC3703C

Description

SOT89 (100/Tube)

CPC3703CTR

SOT89 (2000/Reel)

Package Pinout

Circuit Symbol

(SOT89)

RoHS

2002/95/EC

e₃

DS-CPC3703-R03

www.clare.com

12 3 4

中文翻译

下载PDF

与CPC3703C相关器件

型号	品牌	获取价格	描述	数据表
CPC3703CTR	CLARE	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
CPC3708	IXYS	获取价格	Depletion Mode FET
CPC3708	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经
CPC3708C	IXYS	获取价格	Depletion Mode FET
CPC3708CTR	IXYS	获取价格	Depletion Mode FET
CPC3708Z	IXYS	获取价格	Depletion Mode FET
CPC3708ZTR	IXYS	获取价格	Depletion Mode FET
CPC3710	CLARE	获取价格	N-Channel Depletion-Mode FET
CPC3710	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经
CPC3710C	CLARE	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs