CPC3708
350V N-Channel
Depletion Mode FET
INTEGRATED
CIRCUITS
DIVISION
Parameter
Rating
350
Units
Description
The CPC3708 is a N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3708Z) and an SOT-89
package (CPC3708C). Both utilize IXYS Integrated
Circuits Division’s proprietary third-generation
vertical DMOS process that realizes world class,
high voltage MOSFET performance in an economical
silicon gate process. The vertical DMOS process
yields a highly reliable device, particularly for
use in difficult application environments such as
telecommunications, security, and power supplies.
Drain-to-Source Voltage - V(BR)DSX
Max On-Resistance - RDS(on)
Max Power
V
14
SOT-89 Package
1.1
2.5
W
SOT-223 Package
Features
• 350V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
CPC3708Z and the CPC3708C have a typical
on-resistance of 8 and a drain-to-source voltage
of 350V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
• Low On-Resistance: 8 (Typical) @ 25°C
• Low VGS(off) Voltage
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-89 and SOT-223
• PCB Space and Cost Savings
Ordering Information
Applications
Part Number
CPC3708CTR
CPC3708ZTR
Description
SOT-89: Tape and Reel (4000/Reel)
• LED Drive Circuits
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
SOT-223: Tape and Reel (1000/Reel)
• Security
• Power Supplies
• Regulators
Circuit Symbol
Package Pinout:
D
D
G
4
2
1
3
S
G
D
S
Pin Number
Name
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN
1
DS-CPC3708-R04
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