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CPC3708 PDF预览

CPC3708

更新时间: 2024-11-07 14:56:43
品牌 Logo 应用领域
力特 - LITTELFUSE 高压晶体管场效应晶体管栅极
页数 文件大小 规格书
6页 546K
描述
我们的N沟道耗尽型场效应晶体管(FET)采用专有的第三代垂直DMOS工艺。 第三代工艺在经济的硅栅极工艺中实现了世界级的高压MOSFET性能。 垂直DMOS工艺为具有高输入阻抗的高功率应用提供了一

CPC3708 数据手册

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CPC3708  
350V N-Channel  
Depletion Mode FET  
INTEGRATED  
CIRCUITS  
DIVISION  
Parameter  
Rating  
350  
Units  
Description  
The CPC3708 is a N-channel, depletion mode Field  
Effect Transistor (FET) that is available in an  
SOT-223 package (CPC3708Z) and an SOT-89  
package (CPC3708C). Both utilize IXYS Integrated  
Circuits Division’s proprietary third-generation  
vertical DMOS process that realizes world class,  
high voltage MOSFET performance in an economical  
silicon gate process. The vertical DMOS process  
yields a highly reliable device, particularly for  
use in difficult application environments such as  
telecommunications, security, and power supplies.  
Drain-to-Source Voltage - V(BR)DSX  
Max On-Resistance - RDS(on)  
Max Power  
V
14  
SOT-89 Package  
1.1  
2.5  
W
SOT-223 Package  
Features  
350V Drain-to-Source Voltage  
Depletion Mode Device Offers Low RDS(on)  
at Cold Temperatures  
CPC3708Z and the CPC3708C have a typical  
on-resistance of 8and a drain-to-source voltage  
of 350V. As with all MOS devices, the FET structure  
prevents thermal runaway and thermally induced  
secondary breakdown.  
Low On-Resistance: 8(Typical) @ 25°C  
Low VGS(off) Voltage  
High Input Impedance  
Low Input and Output Leakage  
Small Package Size SOT-89 and SOT-223  
PCB Space and Cost Savings  
Ordering Information  
Applications  
Part Number  
CPC3708CTR  
CPC3708ZTR  
Description  
SOT-89: Tape and Reel (4000/Reel)  
LED Drive Circuits  
Telecommunications  
Normally On Switches  
Ignition Modules  
Converters  
SOT-223: Tape and Reel (1000/Reel)  
Security  
Power Supplies  
Regulators  
Circuit Symbol  
Package Pinout:  
D
D
G
4
2
1
3
S
G
D
S
Pin Number  
Name  
1
2
3
4
GATE  
DRAIN  
SOURCE  
DRAIN  
1
DS-CPC3708-R04  
www.ixysic.com  

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