Datasheet > CPC3708

CPC3708

更新时间： 2024-11-22 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		栅高压晶体管场效应晶体管栅极
页数	文件大小	规格书
6页	546K
描述
我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经济的硅栅极工艺中实现了世界级的高压MOSFET性能。垂直DMOS工艺为具有高输入阻抗的高功率应用提供了一

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CPC3708 数据手册

CPC3708

350V N-Channel

Depletion Mode FET

INTEGRATED

CIRCUITS

DIVISION

Parameter

Rating

350

Units

Description

The CPC3708 is a N-channel, depletion mode Field

Effect Transistor (FET) that is available in an

SOT-223 package (CPC3708Z) and an SOT-89

package (CPC3708C). Both utilize IXYS Integrated

Circuits Division’s proprietary third-generation

vertical DMOS process that realizes world class,

high voltage MOSFET performance in an economical

silicon gate process. The vertical DMOS process

yields a highly reliable device, particularly for

use in difficult application environments such as

telecommunications, security, and power supplies.

Drain-to-Source Voltage - V_(BR)DSX

Max On-Resistance - R_DS(on)

Max Power



SOT-89 Package

1.1

2.5

SOT-223 Package

Features

• 350V Drain-to-Source Voltage

• Depletion Mode Device Offers Low R_DS(on)

at Cold Temperatures

CPC3708Z and the CPC3708C have a typical

on-resistance of 8 and a drain-to-source voltage

of 350V. As with all MOS devices, the FET structure

prevents thermal runaway and thermally induced

secondary breakdown.

• Low On-Resistance: 8 (Typical) @ 25°C

• Low V_GS(off)Voltage

• High Input Impedance

• Low Input and Output Leakage

• Small Package Size SOT-89 and SOT-223

• PCB Space and Cost Savings

Ordering Information

Applications

Part Number

CPC3708CTR

CPC3708ZTR

Description

SOT-89: Tape and Reel (4000/Reel)

• LED Drive Circuits

• Telecommunications

• Normally On Switches

• Ignition Modules

• Converters

SOT-223: Tape and Reel (1000/Reel)

• Security

• Power Supplies

• Regulators

Circuit Symbol

Package Pinout:

Pin Number

Name

GATE

DRAIN

SOURCE

DRAIN

DS-CPC3708-R04

www.ixysic.com

12 3 4 5 6

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与CPC3708相关器件

型号	品牌	获取价格	描述	数据表
CPC3708C	IXYS	获取价格	Depletion Mode FET
CPC3708CTR	IXYS	获取价格	Depletion Mode FET
CPC3708Z	IXYS	获取价格	Depletion Mode FET
CPC3708ZTR	IXYS	获取价格	Depletion Mode FET
CPC3710	CLARE	获取价格	N-Channel Depletion-Mode FET
CPC3710	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经
CPC3710C	CLARE	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
CPC3710CTR	CLARE	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
CPC3714	CLARE	获取价格	N-Channel Depletion-Mode FET
CPC3714	LITTELFUSE	获取价格	我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经