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CPC3701_12 PDF预览

CPC3701_12

更新时间: 2024-11-21 12:25:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
4页 98K
描述
60V, Depletion-Mode, N-Channel Vertical DMOS FET

CPC3701_12 数据手册

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CPC3701  
60V, Depletion-Mode, N-Channel  
Vertical DMOS FET  
INTEGRATED  
CIRCUITS  
DIVISION  
Description  
V(BR)DSX  
V(BR)DGX  
/
RDS(on)  
(max)  
IDSS (min)  
Package  
The CPC3701 is an N-channel, depletion mode, field  
effect transistor (FET) that utilizes IXYS Integrated  
Circuits Division’s proprietary third-generation vertical  
DMOS process. The third-generation process realizes  
world class, high voltage MOSFET performance  
in an economical silicon gate process. Our vertical  
DMOS process yields a robust device, with high input  
impedance, for use in high-power applications. The  
CPC3701 is a highly reliable FET device that has  
been used extensively in our Solid State Relays for  
industrial and security applications.  
60V  
1  
600mA  
SOT-89  
Features  
Depletion Mode Device Offers Low RDS(on)  
at Cold Temperatures  
Low On-Resistance: 1max. at 25ºC  
High Input Impedance  
Low VGS(off) Voltage: -0.8 to -2.9V  
Small Package Size SOT-89  
The CPC3701 has a minimum breakdown voltage of  
60V, and is available in the SOT-89 package. As with  
all MOS devices, the FET structure prevents thermal  
runaway and thermal-induced secondary breakdown.  
Applications  
Ignition Modules  
Normally-On Switches  
Solid State Relays  
Converters  
Security  
Power Supplies  
Ordering Information  
Part #  
CPC3701C  
Description  
N-Channel Depletion Mode FET, SOT-89 Pkg.  
Cut-Tape, Available in Quantities of 200, 300,  
400, 500, and 600  
CPC3701CTR  
N-Channel Depletion Mode FET, SOT-89 Pkg.  
Tape and Reel (1000/Reel)  
Package Pinout (SOT-89)  
D
Circuit Symbol  
G
D
S
D
S
G
Pb  
e3  
DS-CPC3701-R03  
1
www.ixysic.com  

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