Datasheet > CP392V-H2N3904

CP392V-H2N3904

更新时间： 2023-12-06 20:09:15

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
5页	532K
描述
Bare die,11.024 X 11.024 mils,Amplifier/Switch Transistor

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CP392V-H2N3904 数据手册

CP392V-2N3904

NPN - General Purpose Transistor Die

0.2 Amp, 40 Volt

www.centralsemi.com

The CP392V-2N3904 is a silicon NPN transistor designed for general purpose applications.

MECHANICAL SPECIFICATIONS:

Die Size

11 x 11 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.74 x 3.74 MILS

Al – 30,000Å

Au – 12,000Å

1.5 MILS

4 INCHES

Gross Die Per Wafer

93,826

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Operating and Storage Junction Temperature

200

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

=30V, V =3.0V

MIN

MAX

UNITS

CEV

I =10μA

CBO

CEO

EBO

I =1.0mA

I =10μA

6.0

I =10mA, I =1.0mA

0.20

0.30

0.85

0.95

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

0.65

I =50mA, I =5.0mA

=1.0V, I =0.1mA

=1.0V, I =1.0mA

=1.0V, I =10mA

100

300

400

=1.0V, I =50mA

=1.0V, I =100mA

=10V, I =1.0mA, f=1.0kHz

100

300

=20V, I =10mA, f=100MHz

MHz

=5.0V, I =0, f=100kHz

4.0

=0.5V, I =0, f=100kHz

R0 (20-September 2018)

12 3 4 5

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