Datasheet > CP394R-CEDM7004

CP394R-CEDM7004

更新时间： 2024-11-26 14:55:43

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CP394R-CEDM7004 数据手册

PROCESS CP394R

Small Signal MOSFET Transistor

N-Channel Enhancement-Mode Transistor Chip

PROCESS DETAILS

Die Size

15.7 x 15.7 MILS

Die Thickness

3.9 MILS

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

3.9 x 3.9 MILS

9.1 x 8.1 MILS

Al-Si - 35,000Å

Au - 12,000Å

GEOMETRY

GROSS DIE PER 6 INCH WAFER

95,400

PRINCIPAL DEVICE TYPES

CEDM7004

R1 (22-March 2010)

www.centralsemi.com

12 3 4

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