Datasheet > CP392V-MPS6513

CP392V-MPS6513

更新时间： 2023-12-06 20:10:38

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	452K
描述
30V,100mA,625mW Bare die,11.024 X 11.024 mils,Transistor-Small Signal (<=1A)

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CP392V-MPS6513 数据手册

CP392V-MPS6513

NPN - General Purpose Transistor Die

0.1 Amp, 30 Volt

www.centralsemi.com

The CP392V-MPS6513 is a silicon NPN transistor designed for general purpose applications.

MECHANICAL SPECIFICATIONS:

Die Size

11 x 11 MILS

7.1 MILS

Die Thickness

Base Bonding Pad Size

Emitter Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.74 x 3.74 MILS

Al – 13,000Å

As - Au – 12,000Å

1.96 MILS

6 INCHES

Gross Die Per Wafer

197,876

BACKSIDE COLLECTOR

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

4.0

Continuous Collector Current

Operating and Storage Junction Temperature

100

°C

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=30V

CBO

I =0.5mA

CEO

EBO

I =10µA

4.0

I =50mA, I =5.0mA

0.5

3.5

CE(SAT)

=10V, I =0, f=100kHz

=10V, I =2.0mA

180

=10V, I =100mA

R0 (03-May 2022)

12 3 4

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