Datasheet > CP398X-CPDM303NH

CP398X-CPDM303NH

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	739K
描述
Bare die,37.800 X 26.000 mils,N-Chan Enhancement Mode MOSFET

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CP398X-CPDM303NH 数据手册

CP398X-CPDM303NH

N-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP398X-CPDM303NH is a silicon N-Channel MOSFET designed for high speed pulsed

ampliﬁer and driver applications.

MECHANICAL SPECIFICATIONS:

Die Size

37.8 x 26 MILS

5.5 MILS

Die Thickness

Gate Bonding Pad Size

Source Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

7.3 x 7.3 MILS

34 x 22.2 MILS

Al – 40,000Å

Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å

2.36 MILS

8 INCHES

Gross Die Per Wafer

45,000

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

3.6

14.4

T , T

-55 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=12V, V =0

μA

GSSF GSSR

=20V, V =0

1.0

μA

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

0.6

1.2

0.04

0.078

GS DS

=4.5V, I =1.8A

DS(ON)

=2.5V, I =1.8A

=5.0V, I =3.6A

11.8

=10V, V =0, f=1.0MHz

rss

iss

=10V, V =0, f=1.0MHz

590

=10V, V =0, f=1.0MHz

oss

=10V, V =4.5V, I =3.6A

1.4

2.7

g(tot)

=10V, V =4.5V, I =3.6A

=10V, V =4.0V, I =3.6A, R =10Ω

off

=10V, V =4.0V, I =3.6A, R =10Ω

R0 (8-April 2019)

12 3 4

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