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CMUT3904LEADFREE PDF预览

CMUT3904LEADFREE

更新时间: 2024-12-01 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 345K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

CMUT3904LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.19最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

CMUT3904LEADFREE 数据手册

 浏览型号CMUT3904LEADFREE的Datasheet PDF文件第2页 
CMUT3904 NPN  
CMUT3906 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMUT3904,  
CMUT3906 types are complementary silicon transistors  
manufactured by the epitaxial planar process, epoxy  
molded in an ULTRAmini™ surface mount package,  
designed for small signal general purpose amplifier and  
switching applications.  
MARKING CODES: CMUT3904: AC1  
CMUT3906: AC2  
SOT-523 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
CMUT3904  
CMUT3906  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
60  
40  
40  
40  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6.0  
5.0  
V
Continuous Collector Current  
Power Dissipation  
I
200  
250  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
CMUT3904  
MIN MAX  
CMUT3906  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
UNITS  
I
V
-
60  
40  
6.0  
-
50  
-
40  
40  
5.0  
-
50  
nA  
V
CEV  
CE  
I =10μA  
EB  
BV  
BV  
BV  
-
-
-
-
CBO  
CEO  
C
I =1.0mA  
V
C
I =10μA  
-
-
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
0.20  
0.30  
0.25  
0.40  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =50mA, I =5.0mA  
-
-
V
C
B
I =10mA, I =1.0mA  
0.65 0.85  
0.65 0.85  
V
C
B
I =50mA, I =5.0mA  
-
0.95  
-
-
0.95  
60  
80  
300  
-
V
C
B
h
h
h
h
h
V
=1.0V, I =0.1mA  
40  
70  
100  
60  
30  
-
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
=1.0V, I =1.0mA  
-
-
FE  
C
=1.0V, I =10mA  
300  
100  
60  
30  
FE  
C
=1.0V, I =50mA  
-
-
FE  
C
=1.0V, I =100mA  
-
FE  
C
R2 (9-February 2010)  

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