5秒后页面跳转
CMPT6520 PDF预览

CMPT6520

更新时间: 2024-09-21 04:12:27
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管光电二极管高压放大器
页数 文件大小 规格书
2页 104K
描述
COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS

CMPT6520 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.18Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

CMPT6520 数据手册

 浏览型号CMPT6520的Datasheet PDF文件第2页 
TM  
Central  
CMPT6517 NPN  
CMPT6520 PNP  
Semiconductor Corp.  
COMPLEMENTARY SILICON  
HIGH VOLTAGE TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPT6517,  
CMPT6520 types are complementary silicon  
transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for high voltage driver and  
amplifier applications.  
MARKING CODE:  
CMPT6517: C1Z  
CMPT6520: C2Z  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Base Current  
V
V
V
350  
350  
5.0  
500  
250  
350  
V
V
V
mA  
mA  
mW  
CBO  
CEO  
EBO  
I
C
I
B
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
-65 to +150  
357  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=250V  
50  
nA  
CBO  
EBO  
EBO  
CB  
EB  
EB  
=5.0V (CMPT6517)  
=4.0V (CMPT6520)  
I =100µA  
50  
50  
nA  
nA  
V
V
V
V
V
V
V
V
V
V
V
BV  
BV  
BV  
BV  
350  
350  
6.0  
5.0  
CBO  
CEO  
EBO  
C
I =1.0mA  
C
I =10µA (CMPT6517)  
E
I =10µA (CMPT6520)  
EBO  
E
V
V
V
V
V
V
V
V
I =10mA, I =1.0mA  
0.30  
0.35  
0.50  
1.0  
0.75  
0.85  
0.90  
2.0  
CE(SAT)  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
B
B
B
B
B
B
I =20mA, I =2.0mA  
C
I =30mA, I =3.0mA  
C
I =50mA, I =5.0mA  
C
I =10mA, I =1.0mA  
C
I =20mA, I =2.0mA  
C
I =30mA, I =3.0mA  
C
I =10V, I =100mA  
V
C
C
h
h
V
=10V, I =1.0mA  
20  
30  
CE  
CE  
C
V
=10V, I =10mA  
C
FE  
R4 (26-September 2002)  

与CMPT6520相关器件

型号 品牌 获取价格 描述 数据表
CMPT6520BK CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon,
CMPT6520TR CENTRAL

获取价格

暂无描述
CMPT6520TR13 CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon,
CMPT6520TR13LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon,
CMPT-7.20-0.53 NUVOTEM TALEMA

获取价格

Common Mode Toroidal Chokes
CMPT7090L CENTRAL

获取价格

Power Transistor PNP - Low Saturation Transistor Chip
CMPT7090LBK CENTRAL

获取价格

Transistor
CMPT7090LBKLEADFREE CENTRAL

获取价格

Transistor
CMPT7090LBKPBFREE CENTRAL

获取价格

暂无描述
CMPT7090LLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, POWER23,