CMPT6520TR

更新时间： 2024-09-21 13:06:59

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CMPT6520TR 数据手册

Central

CMPT6517 NPN

CMPT6520 PNP

Semiconductor Corp.

COMPLEMENTARY SILICON

HIGH VOLTAGE TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT6517,

CMPT6520 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high voltage driver and

amplifier applications.

MARKING CODE:

CMPT6517: C1Z

CMPT6520: C2Z

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Base Current

350

5.0

500

250

350

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

stg

-65 to +150

357

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=250V

CBO

EBO

=5.0V (CMPT6517)

=4.0V (CMPT6520)

I =100µA

350

6.0

5.0

CBO

CEO

EBO

I =1.0mA

I =10µA (CMPT6517)

I =10µA (CMPT6520)

EBO

I =10mA, I =1.0mA

0.30

0.35

0.50

1.0

0.75

0.85

0.90

2.0

CE(SAT)

BE(SAT)

BE(ON)

I =20mA, I =2.0mA

I =30mA, I =3.0mA

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =20mA, I =2.0mA

I =30mA, I =3.0mA

I =10V, I =100mA

=10V, I =1.0mA

=10V, I =10mA

R4 (26-September 2002)

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