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CMLD6263C PDF预览

CMLD6263C

更新时间: 2024-11-19 03:26:03
品牌 Logo 应用领域
CENTRAL 整流二极管肖特基二极管测试光电二极管高压
页数 文件大小 规格书
2页 104K
描述
SURFACE MOUNT PICOmini⑩ DUAL PAIR, HIGH VOLTAGE SILICON SCHOTTKY DIODES

CMLD6263C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-PDSO-F6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.34Is Samacsys:N
配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.41 V
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:4端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.015 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:70 V
最大反向电流:0.2 µA最大反向恢复时间:0.005 µs
反向测试电压:50 V子类别:Signal Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMLD6263C 数据手册

 浏览型号CMLD6263C的Datasheet PDF文件第2页 
TM  
CMLD6263A  
CMLD6263C  
CMLD6263S  
Central  
Semiconductor Corp.  
SURFACE MOUNT PICOmini  
DUAL PAIR, HIGH VOLTAGE  
SILICON SCHOTTKY DIODES  
FEATURES:  
HIGH VOLTAGE (70V)  
LOW FORWARD VOLTAGE  
VARIOUS DUAL PAIR CONFIGURATIONS  
SOT-563 CASE  
CMLD6263A  
Dual Pair, Common Anode  
Marking Code: 63A  
CMLD6263C  
CMLD6263S  
Dual Pair, Common Cathode Marking Code: 63C  
Dual Pair, In Series  
Marking Code: 63S  
DESCRIPTION:  
The Central Semiconductor CMLD6263 Series incorporates two pair, high voltage, low V Silicon  
F
Diodes in a space saving SOT-563 surface mount package. These diodes are designed for fast  
switching applications requiring a low forward voltage drop.  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Forward Surge Current, tp=1.0 s  
Power Dissipation  
V
70  
15  
50  
V
RRM  
F
FSM  
I
I
P
mA  
mA  
mW  
250  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
JA  
-65 to +150  
500  
°C  
°C/W  
J
Θ
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
V =50V  
98  
200  
nA  
V
mV  
pF  
ns  
R
R
BV  
V
C
t
I =10µA  
70  
R
R
I =1.0mA  
395  
410  
2.0  
5.0  
F
T
rr  
F
V =0V, f=1.0MHz  
R
I =I =10mA, I =1.0mA, R =100Ω  
rr  
R
F
L
R0 ( 8-May 2003)  

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