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CMLD6001TR PDF预览

CMLD6001TR

更新时间: 2024-11-19 20:05:23
品牌 Logo 应用领域
CENTRAL 测试光电二极管
页数 文件大小 规格书
2页 576K
描述
Rectifier Diode, 2 Element, 0.25A, 100V V(RRM), Silicon, PLASTIC, PICOMINI-6

CMLD6001TR 技术参数

生命周期:Obsolete包装说明:R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.69配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-F6
JESD-609代码:e0元件数量:2
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:0.0005 µA最大反向恢复时间:3 µs
反向测试电压:75 V子类别:Other Diodes
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

CMLD6001TR 数据手册

 浏览型号CMLD6001TR的Datasheet PDF文件第2页 
CMLD6001  
SURFACE MOUNT  
DUAL, ISOLATED  
ULTRA LOW LEAKAGE  
SILICON SWITCHING DIODES  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLD6001 type  
contains Two (2) Isolated Silicon Switching Diodes,  
manufactured by the epitaxial planar process, epoxy  
molded in a PICOmini surface mount package.  
These devices are designed for switching applications  
requiring extremely low leakage.  
MARKING CODE: C6D  
SOT-563 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
V
75  
100  
R
V
V
mA  
A
RRM  
I
250  
F
I
4.0  
FSM  
I
1.0  
A
FSM  
P
250  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V =75V  
500  
pA  
R
R
BV  
I =100μA  
R
100  
V
V
R
V
F
I =1.0mA  
0.85  
0.95  
1.1  
F
V
I =10mA  
F
V
F
V
F
I =100mA  
V
F
C
V =0, f=1.0MHz  
R
2.0  
pF  
μs  
T
t
I =I =10mA, I =1.0mA, R =100Ω  
3.0  
rr  
R
F
rr  
L
R3 (9-May 2011)  

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