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CMG02(TE12L,Q,M) PDF预览

CMG02(TE12L,Q,M)

更新时间: 2024-11-20 21:19:19
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
4页 190K
描述
X35 PB-FREE RECTIFIER; M-FLAT; MOQ=3000; P=2W; VRRM=400V

CMG02(TE12L,Q,M) 技术参数

生命周期:ActiveReach Compliance Code:unknown
Factory Lead Time:12 weeks风险等级:5.66
二极管类型:RECTIFIER DIODEBase Number Matches:1

CMG02(TE12L,Q,M) 数据手册

 浏览型号CMG02(TE12L,Q,M)的Datasheet PDF文件第2页浏览型号CMG02(TE12L,Q,M)的Datasheet PDF文件第3页浏览型号CMG02(TE12L,Q,M)的Datasheet PDF文件第4页 
CMG02  
TOSHIBA Rectifier Silicon Diffused Type  
CMG02  
Unit: mm  
General-Purpose Rectifier Applications  
Average forward current: I  
= 2.0 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 400 V  
RRM  
Suitable for high-density board assembly due to the use of a small  
surface-mount package, MFLATTM  
Absolute Maximum Ratings (Ta = 25°C)  
0.16  
Characteristics  
Symbol  
Rating  
Unit  
1.75 ± 0.1  
+ 0.2  
2.4 0.1  
Repetitive peak reverse voltage  
Average forward current  
Non-repetitive peak surge current  
Junction temperature  
V
400  
V
A
RRM  
I
2.0  
F (AV)  
I
80 (50 Hz)  
40 to 150  
40 to 150  
A
FSM  
ANODE  
CATHODE  
T
j
°C  
°C  
Storage temperature  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
3-4E1A  
Weight: 0.023 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and  
individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
FM(1)  
V
FM(2)  
I
RRM  
I
I
=1.0 A  
= 2.0 A  
0.86  
0.9  
1.1  
10  
V
V
FM  
FM  
Peak forward voltage  
Peak repetitive reverse current  
V
= 400 V  
μA  
RRM  
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 mm)  
60  
Device mounted on a glass-epoxy  
board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 mm)  
Thermal resistance  
(junction to ambient)  
110  
R
th (j-a)  
°C/W  
Device mounted on a glass-epoxy  
board  
(board size: 50 mm × 50 mm)  
(soldering land: 2.1 mm × 1.4 mm)  
(board thickness: 1.6 mm)  
180  
16  
Thermal resistance  
(junction to lead)  
R
°C/W  
th (j-)  
Start of commercial production  
2002-11  
1
2013-11-01  

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