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CMG08

更新时间： 2024-11-25 14:57:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 486K
描述
EOL announced

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CMG08 数据手册

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CMG08  
Rectifier Diode Silicon Diffused Type  
CMG08  
○ General Power Supply Rectification  
Unit: mm  
•
•
•
•
Repetitive peak reverse voltage : V  
= 600 V  
RRM  
Average forward current  
Peak forward voltage  
: I  
= 1.0 A  
F (AV)  
: VFM = 1.1 V (max)  
Suitable for high-density board assembly due to the use of a small  
Toshiba Nickname: M−FLATTM  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Repetitive peak reverse voltage  
Average forward current  
Symbol  
Rating  
600  
Unit  
V
V
RRM  
1
2
ANODE  
I
1.0 (Note1)  
30 (50 Hz)  
−40 to 150  
−40 to 150  
A
F (AV)  
CATHODE  
Non-repetitive peak forward surge current  
Junction temperature  
I
A
FSM  
T
°C  
°C  
j
Storage temperature  
T
stg  
JEDEC  
JEITA  
―
―
Note 1: Ta = 78°C Device mounted on a ceramic board  
board size ：50 mm × 50 mm  
Soldering land size ：2 mm × 2 mm  
board thickness ：0.64 mm  
Half-sine waveform ：α = 180°  
TOSHIBA  
3-4E1S  
Weight: 0.023 g (typ.)  
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0.1 A (Pulse test)  
Min  
―
Typ.  
0.80  
0.91  
0.94  
Max  
Unit  
V
V
FM(1)  
V
FM(2)  
V
FM(3)  
I
RRM  
I
I
I
FM  
FM  
FM  
Peak forward voltage  
= 0.7 A (Pulse test)  
= 1.0 A (Pulse test)  
―
V
―
1.1  
10  
V
Repetitive peak reverse current  
V
= 600 V (Pulse test)  
―
μA  
RRM  
Device mounted on a ceramic board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
2 mm × 2 mm  
0.64 mm  
―
―
60  
Device mounted on a glass-epoxy board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
6 mm × 6 mm  
1.6 mm  
Thermal resistance  
(junction to ambient)  
R
th (j-a)  
135  
°C/W  
Device mounted on a glass-epoxy board  
board size  
soldering land size  
board thickness  
50 mm × 50 mm  
2.1 mm × 1.4 mm  
1.6 mm  
―
―
210  
16  
Thermal resistance (junction to lead)  
R
th (j-ℓ)  
―
―
°C/W  
Start of commercial production  
2008-10  
1
2018-10-01  
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