Datasheet > CM9

CM9

更新时间： 2024-01-13 07:13:18

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描述
Mixed-Signal CMOS and specialized analog processes

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CM9 数据手册

9 Micron Metal Gate

CMOS Process

Process parameters

Features

• Metal Gate Process

Table 1:

9 µm

8 / 5

8 x 8

Units

• 13 µm Metal Pitch

Metal pitch (width/space)

Contact

• 16 Volts Maximum Operating Voltage

• Simple Process (7 masks)

• Very Short Cycle Time

• Very High Yield

Gate geometry

P-well junction depth

N+ junction depth

P+ junction depth

Gate oxide thickness

Description

2.4

The 9 mm process is a CMOS process with an operating voltage

range from 5 to 16 volts. The gate material is metal; which is

common in many mature designs. An advantage of this process

is its simplicity and its short cycle time.

2.6

1050

MOSFET Electrical Parameters

Resistances (W /sq.)

9 MICRON - 15 volts

9 MICRON -15 volts

Units

Conditions

N Channel

P Channel

min.

typ.

max.

min. typ. max.

Vt (50 x 9 mm)

Ids (50 x 9 mm)

Gain b (50 x 9 mm)

Bvdss

1.0

1.3

200

700

1.6

1.9

2.2

saturation

Pwell

N+

1500

µA/µm Vds=Vgs=3v

µA/V²

200

P+

100

Ids=1µA

Metal I

0.038

Field threshold

L effective

5.2

4.8

µm

L drawn =

9µm

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