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CM900HG-130X PDF预览

CM900HG-130X

更新时间: 2024-11-02 21:16:35
品牌 Logo 应用领域
三菱 - MITSUBISHI
页数 文件大小 规格书
9页 535K
描述
Insulated Gate Bipolar Transistor,

CM900HG-130X 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.65
Base Number Matches:1

CM900HG-130X 数据手册

 浏览型号CM900HG-130X的Datasheet PDF文件第2页浏览型号CM900HG-130X的Datasheet PDF文件第3页浏览型号CM900HG-130X的Datasheet PDF文件第4页浏览型号CM900HG-130X的Datasheet PDF文件第5页浏览型号CM900HG-130X的Datasheet PDF文件第6页浏览型号CM900HG-130X的Datasheet PDF文件第7页 
< High Voltage Insulated Gate Bipolar TransistorHVIGBT >  
CM900HG-130X  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
CM900HG-130X  
IC····································································900A  
VCES···························································6500V  
1-element in a Pack  
High Insulated Type  
CSTBTTM(III) / RFC Diode  
AlSiC Baseplate  
APPLICATION  
Traction drives, High Reliability Converters / Inverters, DC choppers  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
Sep. 2019 (HVM-1073-K)  
1

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