Datasheet > CHA3666-99G/00

CHA3666-99G/00

更新时间： 2024-11-12 00:04:23

品牌	Logo	应用领域
UMS		放大器
页数	文件大小	规格书
8页	390K
描述
6-17GHz Low Noise Amplifier

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数据手册

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CHA3666-99G/00 数据手册

CHA3666

RoHS COMPLIANT

6-17GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA3666 is a two-stage self biased

wide band monolithic low noise amplifier.

The circuit is manufactured with a standard

P-HEMT process: 0.25µm gate length, via

holes through the substrate, air bridges and

electron beam gate lithography.

RFout

RFin

UMS

P2 N2

Main Features

24,0

22,0

20,0

18,0

16,0

14,0

12,0

10,0

8,0

■ Broadband performance 6-17GHz

■ 1.8dB noise figure

■ 26dBm 3^rdorder intercept point

■ 17dBm power at 1dB compression

■ 21dB gain

Gain

■ Low DC power consumption

6,0

4,0

2,0

0,0

4,00

6,00

8,00

10,00

12,00

14,00

16,00

18,00

Main Characteristics

Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND

Symbol

Parameter

Min

Typ

Max

Unit

Noise figure

Gain

1.8

IP3

3rd order intercept point

dBm

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

Ref. : DSCHA36666159 - 08 Jun 06

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7 8

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