Datasheet > CHA4094-99F/00

CHA4094-99F/00

更新时间： 2024-11-11 22:06:55

品牌	Logo	应用领域
UMS		放大器射频微波功率放大器
页数	文件大小	规格书
4页	82K
描述
36-40GHz High Power Amplifier

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CHA4094-99F/00 数据手册

CHA4094

36-40GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA4094 is a high gain broadband three-

stage balanced monolithic power amplifier. It is

designed for a wide range of applications, from

military to commercial communication systems.

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Typical on wafer measurements :

Main Features

Gain

■ Broadband performances

-5

■ 22 dBm output power ( 1dB gain comp. )

■ 9 dB ± 1 dB gain

-10

(dB)

-15

-20

-25

-30

■ Chip size : 1.65 X 2.05 X 0.10 mm

OUT

Frequency (GHz)

Main Characteristics

Tamb. = 25°C

Symbol

Fop

Parameter

Min

Typ

Max

Unit

GHz

Operating frequency range

Small signal gain

P1dB

Output power at 1dB gain compression

Bias current

dBm

750

920

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCHA40949349 – 15 Dec. 99

1/4

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4

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