Datasheet > CHA4107-99F_15

CHA4107-99F_15

更新时间： 2024-11-13 01:17:15

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
10页	450K
描述
4.5-6.5GHz Medium Power Amplifier

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CHA4107-99F_15 数据手册

CHA4107-99F

4.5-6.5GHz Medium Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA4107-99F is a monolithic two stage

power amplifier designed for C-Band

applications.

Vd1

Vd2

The MPA provides typically 26dBm output

power associated to 35% power added

efficiency at 3dBcomp.

OUT

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography. It is available

in chip form.

Main Features

■ Frequency band: 4.5-6.5GHz

■ 26dBm @ 3dBcomp

■ 24.5 dB Linear Gain

■ High PAE: 35% for +5dBm input power

■ DC bias: Vd=8V@Id=115mA

■ Chip size 2.37x1.5x0.07mm

Main Characteristics

Vd = 8V, Id (Quiescent) = 115 mA, Drain Pulse width = 45µs, Duty cycle = 12%

Symbol

Freq

Gain

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

Linear Gain

4.5

6.5

24.5

Noise Figure

Pout

Output Power @ 3dB comp.

dBm

Ref. : DSCHA41074188 - 07 Jul 14

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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