Datasheet > CHA5014-99F

CHA5014-99F

更新时间： 2024-11-13 01:17:15

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
8页	591K
描述
X Band HBT Driver Amplifier

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CHA5014-99F 数据手册

CHA5014-99F

RoHS COMPLIANT

X Band HBT Driver Amplifier

GaAs Monolithic Microwave IC

Description

The CHA5014 chip is a monolithic two-

stage medium power amplifier designed for

X band

applications.

Moreover

this

amplifier is relevant for systems that

require an output power weakly sensitive to

temperature.

This device is manufactured using a GaInP

HBT process, including, via holes through

the substrate and air bridges. A nitride

layer protects the transistors and the

passive components.

A special control circuit is implemented to

stabilize the output power in temperature.

Main Features

■ 30dBm Saturated output power

■ Temperature compensated Output power

■ Two biasing modes:

- Digital control thanks to TTL interface

- Analog control thanks to Biasing circuit

■ Quiescent bias point: 8.5V@230mA

■ Chip size: 2.87 x 1.37 x 0.1mm³

Pout & PAE @ 1dBc and Linear Gain (Tamb 20°C)

Main Characteristics

Tamb = +20°C, Vc = +8.5V (Pulse 100µs 20%)

Symbol

Fop

Parameter

Min

Typ

Max

Unit

GHz

Operating frequency range

Small signal gain

8.5

P1dB

Output power at 1dB gain compression

Power supply quiescent current

dBm

Icq

230

ESD Protections: Electrostatic discharge sensitive device observe handling precautions!

Ref. : DSCHA50141097 - 07 Apr 11

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7 8

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