Datasheet > CHA5266-QDG

CHA5266-QDG

更新时间： 2024-11-13 01:17:15

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
14页	428K
描述
10-16 GHz Medium Power Amplifier

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CHA5266-QDG 数据手册

CHA5266-QDG

10-16 GHz Medium Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA5266-QDG is

monolithic GaAs medium power amplifier.

It is designed for wide range of

applications, from professional to commercial

communication systems.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

three stage

UMS

A5266

YYWW

It is supplied in RoHS compliant SMD

package.

Main Features

S21

S11

S22

■ Broadband performances: 10-16GHz

■ 23dB Linear Gain

■ 25.5dBm output power @ 1dB comp.

■ 35dBm output IP3

■ DC bias: Vd=5.0Volt@Id=320mA

■ 24L-QFN4x4

-5

-10

-15

-20

-25

-30

■ MSL1

10 12 14 16 18 20 22 24 26 28 30

Freq (GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

Linear Gain

Gain

OIP3

Pout

Output TOI

dBm

Output Power @1dB comp.

25.5

Ref. : DSCHA5266-QDG3233 - 21 Aug 13

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

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