Datasheet > CHA5356-QGG_15

CHA5356-QGG_15

更新时间： 2022-02-26 13:40:44

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
16页	662K
描述
17.7-23.6GHz Packaged HPA

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CHA5356-QGG_15 数据手册

CHA5356-QGG

17.7-23.6GHz Packaged HPA

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA5356-QGG is

three stage

monolithic GaAs high power amplifier, which

integrates a power detector.

UMS

A5356

It is designed for

wide range of

applications, from military to commercial

communication systems.

YYWW

The circuit is manufactured with a pHEMT

process, 0.15µm gate length.

It is supplied in RoHS compliant SMD

package.

Main Features

Saturated power

■ Broadband performances: 17.7-23.6GHz

■ 33dBm Pout in saturation

■ 38dBm OIP3

■ 19dB Gain

■ 30dB power detection dynamic

■ DC bias: Vd=6.0Volt@Id=700mA

■ QGG-QFN5x5

■ MSL3

-40 °C

25 °C

85 °C

Frequency(GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

Typ

Max

23.6

Unit

GHz

Frequency range

Linear Gain

17.7

Gain

Psat

Saturated Output Power

Output IP3

dBm

OIP3

Ref. : DSCHA5356-QGG4273- 30 Sep 14

1/16

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

12 3 4 5 6 7...16

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