Datasheet > CHA6517-99F/00

CHA6517-99F/00

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
UMS		放大器功率放大器
页数	文件大小	规格书
10页	432K
描述
6 - 18 GHz High Power Amplifier

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CHA6517-99F/00 数据手册

CHA6517

RoHS COMPLIANT

6 - 18 GHz High Power Amplifier

GaAs Monolithic Microwave IC

Description

The CHA6517 is

Dual channel

monolithic three-stage GaAs high power

amplifier designed for wide band

applications.

This device is manufactured using a UMS

0.25 µm Power pHEMT process, including,

via holes through the substrate and air

bridges.

To simplify the assembly process:

•

the backside of the chip is both RF and

DC grounded

Output Power versus Frequency

•

bond pads and back side are gold

plated for compatibility with eutectic die

attach method and thermosonic or

thermocompression bonding process.

Vd3

Main Features

ꢀ

0.25 µm Power pHEMT Technology

6 – 18 GHz Frequency Range

32dBm Output Power per channel

Compatible for balanced configuration

22dB nominal Gain

INPUT A

OUTPUT A

Vd1

Vd2

Vd3

Quiescent Bias point : 600mA @ 8V

per channel

OUTPUT B

INPUT B

ꢀ

Chip size: 4.32 x 3.90 x 0.07 mm

Vd3

Main Characteristics

Tamb = +25°C (Tamb is the back-side of the chip)

Symbol

F_op

Parameter

Operating frequency range

Saturated output power

Linear gain

Min

Typ

Max

Unit

GHz

dBm

Psat

G_lin

Ref. : DSCHA6517-8205 - 25 Jun 08

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7...10

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