Datasheet > CHA6550-QXG

CHA6550-QXG

更新时间： 2024-01-17 09:09:51

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
18页	637K
描述
17.0- 23.6GHz Power Amplifier

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CHA6550-QXG 数据手册

CHA6550-QXG

17.0- 23.6GHz Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA6550-QXG is

three stage

monolithic GaAs high power circuit producing

2.5 Watt output power. It is highly linear, with

possible gain control and integrates a power

detector. ESD protections are included.

It is designed for Point To Point Radio and

K band.

UMS

A6550

YYWW

The circuit is manufactured with a pHEMT

process, 0.15µm gate length.

36 lead 6x5 mm QFN package

It is supplied in RoHS compliant SMD

package.

Output power & PAE vs frequency

Main Features

■ Broadband performances: 17.0- 23.6GHz

■ 34dBm saturated power

■ 41dBm OIP3

■ 22dB gain

■ DC bias: Vd = 6.0Volt @ Id = 1.3A

■ QFN 6x5

Psat

P1dB

PAE at Psat.

■ MSL3

Frequency(GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

Linear Gain

17.0

23.6

Gain

Psat

Saturated output power

Output IP3

dBm

OIP3

Ref. : DSCHA6550-QXG6159 - 07 Jun 16

1/18

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com

12 3 4 5 6 7...18

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