Datasheet > CHA6552-QJG_15

CHA6552-QJG_15

更新时间： 2022-02-26 13:40:44

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
18页	735K
描述
5.8- 8.5GHz Power Amplifier

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CHA6552-QJG_15 数据手册

CHA6552-QJG

5.8- 8.5GHz Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA6552-QJG is

three stage

monolithic GaAs high power circuit producing

4 Watt output power.

UMS

A6552

It is designed for Point to Point radio and

commercial communication systems.

The circuit is manufactured with a pHEMT

process, 0.5µm gate length.

YYWW

It is supplied in RoHS compliant SMD

package.

Pout & PAE versus frequency

Main Features

■ Broadband performances: 5.8- 8.5GHz

■ 36dBm saturated power

■ 35dBm at 1dB compression

■ 22dB gain

■ DC bias: Vd = 7.0Volt @ Id = 1.8A

■ QFN6x6

P-1dB at 1.8 A

Psat at 1.8 A

PAE at 1.8A

■ MSL3

Frequency (GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

Linear Gain

5.8

8.5

Gain

Psat

Saturated output power

Output IP3

dBm

OIP3

Ref. : DSCHA6552-QJG4147 - 27 May 14

1/18

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

12 3 4 5 6 7...18

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