Datasheet > CHA6518-99F00

CHA6518-99F00

更新时间： 2024-02-20 19:57:53

品牌	Logo	应用领域
UMS		放大器功率放大器
页数	文件大小	规格书
8页	252K
描述
5 - 18 GHz High Power Amplifier

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CHA6518-99F00 数据手册

CHA6518

RoHS COMPLIANT

5 - 18 GHz High Power Amplifier

GaAs Monolithic Microwave IC

Main Features

Description

ꢀ 0.25 µm Power pHEMT Technology

ꢀ 5 - 18 GHz Frequency Range

ꢀ 2W Output Power

ꢀ 24 dB nominal Gain

ꢀ Quiescent Bias point: 8V ; 1A

ꢀ Chip size: 5.23 x 3.26 x 0.07 mm

The CHA6518 is a monolithic three-stage

GaAs high power amplifier designed for wide

band applications.

This device is manufactured using a UMS

0.25 µm Power pHEMT process, including,

via holes through the substrate and air

bridges.

To simplify the assembly process:

•

the backside of the chip is both RF and

DC grounded

bond pads and back side are gold plated

for compatibility with eutectic die attach

method

and

thermosonic

thermocompression bonding process.

50Ω

Output

combiner

50Ω

Inter-

stage

Stage 1 /

Stage 2

Input

matching

Inter-

stage

Stage 2 /

Stage 3

OUT

Vd = 8 V

Main Characteristics

Tamb = +25°C (Tamb is the back-side of the chip)

Symbol

F_op

Parameter

Operating frequency range

Saturated output power

Linear gain

Min

Typ

Max

Unit

GHz

dBm

P_sat

G_lin

33.5

ESD Protections: Electrostatic discharge sensitive device observe handling precautions!

Ref. : DSCHA65185007 - 7 Jan 05

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7 8

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