Datasheet > CHA5250-QDG_15

CHA5250-QDG_15

更新时间： 2024-11-13 01:17:15

品牌	Logo	应用领域
UMS		/
页数	文件大小	规格书
16页	518K
描述
5.5-9GHz Medium Power Amplifier

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CHA5250-QDG_15 数据手册

CHA5250-QDG

5.5-9GHz Medium Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA5250-QDG is a three stages

monolithic GaAs medium power circuit, close

to 1 Watt output power.

It is designed for commercial communication

systems.

The circuit is manufactured with a pHEMT

process, 0.5µm gate length.

Main Features

Gain & RLoss

■ Broadband performances: 5.5-9GHz

■ 26dB Linear Gain

■ 28dBm output power @1dB comp.

■ 36dBm output TOI

■ 30% PAE@1dB compression

■ DC bias: Vd=7Volt@Id=280mA

■ 24L-QFN4x4

S11

S21

S22

-5

-10

-15

-20

-25

-30

Frequency(GHz)

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Freq

Parameter

Min

Typ

Max

Unit

GHz

Frequency range

Linear Gain

5.5

9.0

Gain

26.0

36.0

28.0

OTOI

Pout

Output TOI

dBm

Output Power @1dB comp.

Ref. : DSCHA5250-QDG-Full-2355 - 20 Dec 12

1/16

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

12 3 4 5 6 7...16

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