Datasheet > CHA3688AQDG

CHA3688AQDG

更新时间： 2024-11-12 03:25:27

品牌	Logo	应用领域
UMS		放大器
页数	文件大小	规格书
16页	473K
描述
12.5-30GHz Low Noise Amplifier

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中文翻译

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数据手册

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CHA3688AQDG 数据手册

CHA3688aQDG

RoHS COMPLIANT

12.5-30GHz Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The CHA3688aQDG is

three-stage

self-biased wide band monolithic low noise

amplifier.

UMS

A368687A

YYWWG

The circuit is manufactured with a standard

P-HEMT process: 0.25µm gate length, via

holes through the substrate, air bridges and

electron beam gate lithography.

It is available in lead-free package.

Gain and NF @ 115mA (BD grounded)

Main Features

Gain

■ Broadband performance 12.5 - 30GHz

■ 2.1dB noise figure

■

26dB gain

■ 26dBm Output IP3

■ Low DC power consumption

■ 24L-QFN4x4 SMD package

■ RF ports ESD protected (see page 14)

Frequency (GHz)

Main Characteristics

Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads: B, D = GND (High current configuration)

Symbol

Parameter

Min

Typ

2.1

Max

Unit

Noise figure

Gain

2.5

OIP3

3rd order intercept point (16 - 30GHz)

dBm

ESD Protections: Electrostatic discharge sensitive device observe handling precautions!

Ref. : DSCHA3688aQDG8073 - 13 Mar 08

1/16

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - BP46 - 91401 Orsay Cedex France

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

12 3 4 5 6 7...16

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