Datasheet > CHA3023

CHA3023

更新时间： 2024-02-25 06:53:33

品牌	Logo	应用领域
UMS		放大器
页数	文件大小	规格书
8页	389K
描述
1-18 GHz WIDE BAND AMPLIFIER

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中文翻译

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数据手册

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CHA3023 数据手册

CHA3023

RoHS COMPLIANT

1-18 GHz WIDE BAND AMPLIFIER

GaAs Monolithic Microwave IC

Description

The CHA3023 is a travelling wave amplifier

using cascode FET. It is designed for a wide

range of applications.

The circuit is manufactured with a PHEMT

process of 0.25µm gate length, via holes

through the substrate and air bridges and it

is available in die form.

dBS21

Main Features

-5

-10

-15

-20

■

Broadband performances : 1-18 GHz

dBS11

■ 14dB gain

dBS22

■ 3dB typical Low Noise Figure

■ ±0.7 dB gain flatness

■ Die size : 2.15 X 1.42 X 0.10 mm

Frequency (GHz)

On wafer measurements

Main Characteristics

Tamb. = 25°C

Symbol

Fop

Parameter

Min

Typ

Max

Unit

Operating frequency range

Small signal Gain

Noise figure

GHz

12.5

Bias current

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

DSCHA30235263 - 20 sep 05

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7 8

中文翻译

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