CHA3396-QDG
27-33.5GHz Medium PowerAmplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3396-QDG is a 3 stage monolithic
medium power amplifier, which produces
22dB gain for 19dBm output power.
It is designed for
a
wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
UMS
A3396
YYWW
It is supplied in RoHS compliant SMD
package.
Output Power & PAE versus Frequency
Main Features
30
28
26
24
22
20
18
16
14
12
10
■ Broadband performances: 27-33.5GHz
■ 19dBm Pout at 1dB compression
■ 22dB gain
■ 30dBm OTOI
■ DC bias: Vd= 4.0V, Id= 155mA
■ 24L-QFN4x4 (QDG)
■ MSL1
Psat
P-1dB
PAE sat
31
23
24
25
26
27
28
29
30
32
33
34
Frequency(GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
Parameter
Min
Typ
Max
33.5
Unit
GHz
dB
Frequency range
Linear Gain
27.0
Gain
22
19
30
P-1dB
OTOI
Output Power @1dB comp.
3rd order Intercept point
dBm
dBm
Ref. : DSCHA3396-QDG5260 -17 Sep 15
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34