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CHA3396-QDG_15 PDF预览

CHA3396-QDG_15

更新时间: 2022-02-26 13:40:42
品牌 Logo 应用领域
UMS /
页数 文件大小 规格书
16页 523K
描述
27-33.5GHz Medium Power Amplifier

CHA3396-QDG_15 数据手册

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CHA3396-QDG  
27-33.5GHz Medium PowerAmplifier  
GaAs Monolithic Microwave IC in SMD leadless package  
Description  
The CHA3396-QDG is a 3 stage monolithic  
medium power amplifier, which produces  
22dB gain for 19dBm output power.  
It is designed for  
a
wide range of  
applications, from military to commercial  
communication systems.  
The circuit is manufactured with a pHEMT  
process, 0.25µm gate length, via holes  
through the substrate, air bridges and  
electron beam gate lithography.  
UMS  
A3396  
YYWW  
It is supplied in RoHS compliant SMD  
package.  
Output Power & PAE versus Frequency  
Main Features  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
Broadband performances: 27-33.5GHz  
19dBm Pout at 1dB compression  
22dB gain  
30dBm OTOI  
DC bias: Vd= 4.0V, Id= 155mA  
24L-QFN4x4 (QDG)  
MSL1  
Psat  
P-1dB  
PAE sat  
31  
23  
24  
25  
26  
27  
28  
29  
30  
32  
33  
34  
Frequency(GHz)  
Main Electrical Characteristics  
Tamb.= +25°C  
Symbol  
Freq  
Parameter  
Min  
Typ  
Max  
33.5  
Unit  
GHz  
dB  
Frequency range  
Linear Gain  
27.0  
Gain  
22  
19  
30  
P-1dB  
OTOI  
Output Power @1dB comp.  
3rd order Intercept point  
dBm  
dBm  
Ref. : DSCHA3396-QDG5260 -17 Sep 15  
1/16  
Specifications subject to change without notice  
United Monolithic Semiconductors S.A.S.  
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France  
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34  

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