Datasheet > CHA3514

CHA3514

更新时间： 2024-09-24 03:25:27

品牌	Logo	应用领域
UMS		放大器
页数	文件大小	规格书
10页	476K
描述
6-18GHz 4 bit Digital Variable Amplifier

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CHA3514 数据手册

CHA3514

RoHS COMPLIANT

6-18GHz 4 bit Digital Variable Amplifier

GaAs Monolithic Microwave IC

Description

The CHA3514 is composed by a two stage

travelling wave amplifier followed by a four

steps digital attenuator. It is designed for

defense applications. The backside of the

chip is both RF and DC grounded. This helps

to simplify the assembly process.

10A

2.5A

20A

10dB

5dB

2.5dB

2.5B

20dB

20B

10B

The circuit is manufactured with a PM-HEMT

process, 0.25µm gate length, via holes

through the substrate, air bridges and

electron beam gate lithography.

Typical on wafer Measurements

Gain versus attenuation states

It is available in chip form.

Main Features

■ Performances: 6-18GHz

■ 19dBm saturated output power

■ 13 dB gain

■ 4bit attenuator for 39.5dB dynamic range

■ DC power consumption, 190mA @ 4.5V

■ Chip size:

5.54 x 2.30 x 0.1 mm

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Operating frequency range

Min

Typ

Max

Unit

Fop

GHz

Small signal gain @ Attenuator state 0dB

Saturated Output power @ Attenuator state 0dB

Attenuator range with 4bit

Psat

dBm

ATT dyn

39.5

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref. : DSCHA35146278 - 05 Oct 06

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

12 3 4 5 6 7...10

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